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data book 1 03.00 gaas mmic cgy 181 data sheet ? power amplifier for pcn/pcs applications ? fully integrated 2 stage amplifier ? operating voltage range: 2.7 to 6 v ? overall power added efficiency 35% ? input matched to 50 w , simple output match esd: e lectro s tatic d ischarge sensitive device, ob- serve handling precautions! type marking ordering code (8-mm taped) package 1) 1) plastic body identical to p-sot-223, dimensions see page 14 . cgy 181 cgy 181 q68000-a8883 mw-12 maximum ratings symbol value unit positive supply voltage v d 9v negative supply voltage 1) 1) v g = C 8 v only in combination with v tr = 0 v; v g = C 6 v while v tr 1 0 v v g C 8 v supply current i d 2a channel temperature t ch 150 c storage temperature t stg C 55 + 150 c rf input power p in 25 dbm total power dissipation ( t s 81 c) t s : temperature at soldering point p tot 5w thermal resistance symbol value unit channel-soldering point r thchs 14 k/w mw-12
cgy 181 data book 2 03.00 figure 1 functional block diagram short description of cgy 181 operation a negative voltage between C 4 v to C 6 v (stabilization not necessary) has to be connected to the vg-pin, a positive supply voltage has to be applied to the vd-pins. the vtr-pin has to switched to 0 v (gnd) during transmit operation. the mmic cgy 181 is self-biased, the operating current is adjusted by the internal control circuit. in receive mode the vtr-pin is not connected (shut off mode). pin # symbol configuration 1 vg negative voltage at control circuit (C 4 v C 8 v) 2 vtr control voltage for transmit mode (0 v) or receive mode (open) 3, 4, 5, 10 gnd 2 rf and dc ground of the 2 nd stage 6, 9 gnd 1 rf and dc ground of the 1 st stage 7 vd1 positive drain voltage of the 1 st stage 8 rfin rf input power 11 vd2, rfout positive drain voltage of the 2 nd stage, rf output power 12 C not connected eht08662 711 6, 9 3, 4, 5, 10 811 d1 v circuit control 1 v d2 v g 2 v tr gnd1 gnd2 in pp out
cgy 181 data book 3 03.00 dc characteristics characteristics symbol limit values unit test conditions min. typ. max. drain current (stage 1 and 2) i dss1 0.6 0.9 1.2 a v d = 3 v, v g = 0 v, v tr n.c. i dss2 2.4 3.5 4.8 a drain current with active current control i d C1.0C a v d = 3 v, v g = C 4 v, v tr = 0 v transconductance (stage 1 and 2) g fs1 0.28 0.32 C s v d = 3 v, i d = 350 ma g fs2 1.1 1.3 C s v d = 3 v, i d = 700 ma pinch off voltage v p C 3.8 C 2.8 C 1.8 v v d = 3 v, i d < 500 m a (all stages) electrical characteristics t a = 25 c, f = 1.75 ghz, z s = z l = 50 w , v d = 3.6 v, v g = C 4 v, vtr pin connected to ground ; unless otherwise specified characteristics symbol limit values unit test conditions min. typ. max. supply current i dd C1.2C a p in = 0 dbm negative supply current i g C 2 3 ma (normal operation) shut-off current i d C400C m avtr n.c. negative supply current i g C10C m a (shut off mode, vtr pin n.c.) small signal gain g C 20.5 C db p in = C 5 dbm power gain g 14.5 15.5 C db v d = 3.6 v, p in = 16 dbm power gain g 17.5 18.5 C db v d = 5 v, p in = 16 dbm
cgy 181 data book 4 03.00 all rf-measurements were done in a pulsed mode with a duty cycle of 10% ( t on = 0.33 ms)! output power p 0 30.5 31.5 Cdbm v d = 3.6 v, p in = 16 dbm output power p 0 33.5 34.5 C dbm v d = 5 v, p in = 16 dbm overall power added efficiency h C37C % v d = 3.6 v, p in = 16 dbm overall power added efficiency h C35C % v d = 5 v, p in = 16 dbm harmonics 2 f 0 3 f 0 CC C C 44.8 C 70 C C dbc p in = 16 dbm, v d = 3.6 v, p out = 31.85 dbm harmonics 2 f 0 3 f 0 CC C C 45.1 C 75 C C dbc p in = 16 dbm, v d = 5 v, p out = 31.85 dbm input vswr C C 1.9:1 C C v d = 3.6 v third order intercept point ip 3 C41C dbm f 1 = 1.7500 ghz; f 2 = 1.7502 ghz; v d = 3.6v third order intercept point ip 3 C44C dbm f 1 = 1.7500 ghz; f 2 = 1.7502 ghz; v d = 5 v electrical characteristics (contd) t a = 25 c, f = 1.75 ghz, z s = z l = 50 w , v d = 3.6 v, v g = C 4 v, vtr pin connected to ground ; unless otherwise specified characteristics symbol limit values unit test conditions min. typ. max.
data book 5 03.00 cgy 181 dc- i d ( v g ) characteristics - typical values of stage 1, v d = 3 v dc-output characteristics - typical values of stage 1* -5 eht08663 0 g v -4.5 -4 -3.5 -3 -2.5 -2 -1.5 -1 v 0 d i high current medium current low current 0.2 0.4 0.6 0.8 1 1.2 a 0 eht08664 0 d v d i tot p = 1.25 w -0.5 v -0.75 v -1 v -1.25 v -1.5 v -1.75 v -2 v -2.25 v 1 2345v 6 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 a = -0.25 v v g dc- i d ( v g ) characteristics - typical values of stage 2, v d = 3 v dc-output characteristics - typical values of stage 2* *pin 2 ( v tr ) has to be open during measuring dc-characteristics! -5 eht08665 0 g v -4.5 -4 -3.5 -3 -2.5 -2 -1.5 -1 v 0 d i high current medium current low current 0.5 1 1.5 2 2.5 3 3.5 4 4.5 a 0 eht08666 0 d v d i tot p = 3.75 w = -0.5 v g v -0.75 v -1 v -1.25 v -1.5 v -1.75 v -2 v -2.25 v 0.5 1 1.5 2 2.5 3 a 1 2345v 6 -2.5 v
data book 6 03.00 cgy 181 p out and pae vs. p in , v d = 3.6 v, v g = C 4 v, f = 1.75 ghz, pulsed with a duty cycle of 10% ( t on = 0.33 ms) output power at different temperatures, v d = 3.6 v, v g = C 4 v, f = 1.75 ghz, pulsed with a duty cycle of 10% ( t on = 0.33 ms) -5 0 p in pae 0 p out eht08667 out p pae 0 5 10 15 20 5 5 10 10 15 15 20 20 25 25 30 30 35 35 40 40 % dbm dbm -6 eht08669 14 in p -20 ?c 20 ?c 70 ?c -2 2 6 10 14 dbm 20 p out 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 dbm 33 p out and pae vs. p in , v d = 5 v, v g = C 4 v, f = 1.75 ghz, pulsed with a duty cycle of 10% ( t on = 0.33 ms) power added efficiency at different temperatures, v d = 3.6 v, v g = C 4 v, f = 1.75 ghz, pulsed with a duty cycle of 10% ( t on = 0.33 ms) -5 5 p in pae 0 p out eht08668 out p pae 10 5 15 10 20 15 25 20 30 25 35 30 18 35 0 5 10 15 20 % dbm dbm -6 eht08670 0 pae in p -20 ?c 20 ?c 70 ?c -2 2 6 10 14 dbm 20 5 10 15 20 25 30 35 40 45 %
data book 7 03.00 cgy 181 output power at different temperatures, v d = 5 v, v g = C 4 v, f = 1.75 ghz, pulsed with a duty cycle of 10% ( t on = 0.33 ms) measured s-parameter at v d = 3.6 v and p in =16dbm , v g = C 4 v, vtr connected to ground, pulsed with a duty cycle of 10% ( t on = 0.33 ms) -6 eht08671 14 in p -20 ?c 20 ?c 70 ?c -2 2 6 10 14 dbm 20 p out 16 18 20 22 24 26 28 30 32 dbm 35 15 17 19 23 21 25 29 27 31 33 1400 eht08673 -20 f mag s21 s11 -15 -10 -5 0 5 10 15 20 25 30 1500 1600 1700 1800 1900 mhz 2100 db power added efficiency at different temperatures, v d = 5 v, v g = C 4 v, f = 1.75 ghz, pulsed with a duty cycle of 10% ( t on = 0.33 ms) measured s-parameter at v d = 5 v and p in =16dbm , v g = C 4 v, vtr connected to ground, pulsed with a duty cycle of 10% ( t on = 0.33 ms) -6 eht08672 0 pae in p -20 ?c 20 ?c 70 ?c -2 2 6 10 14 dbm 20 5 10 15 20 25 30 35 40 % 1400 eht08674 -20 f mag s21 s11 -15 -10 -5 0 5 10 15 20 25 30 1500 1600 1700 1800 1900 mhz 2100 db
data book 8 03.00 cgy 181 p out vs. v d , v g = C 4 v, f = 1.75 ghz, p in = 16 dbm, pulsed with a duty cycle of 10% ( t on = 0.33 ms) performance of internal bias control circuit @ v d =3 v, v tr = 0 v, pulsed with a duty cycle of 10% ( t on = 0.33 ms) 2.5 eht08675 28 d v p out 3 3.5 4 4.5 5 v 6 29 30 31 32 33 34 35 36 37 dbm 1 eht08676 0 g v 1.5 2 2.5 3 3.5 4 4.5 5 v 6 0.5 1 1.5 2 2.5 3 3.5 4 a d i high current medium current low current - performance of internal bias control circuit @ v d =5 v, v tr = 0 v, pulsed with a duty cycle of 10% ( t on = 0.33 ms) 1 eht08677 0 g v 1.5 2 2.5 3 3.5 4 4.5 5 v 6 d i high current medium current low current 0.5 1 1.5 2 2.5 3 3.5 a -
data book 9 03.00 cgy 181 total power dissipation p tot = f ( t s ) 0 eht08678 0 s t p tot 50 100 150 ?c 1 2 3 4 5 w 6 permissible pulse load p tot_max / p tot_dc = f ( t _p ) eht08679 p t p tot dc 10 -6 0 10 10 3 5 10 0 t t t d = p p t p tot max 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 d = -5 10 -4 10 -3 10 -2 10 -1 10 10 1 5 10 2 s
cgy 181 data book 10 03.00 figure 2 cgy 181 application board layout size is 30 mm 26 mm. part type description cgy 181 infineon gaas-mmic 1 nf capacitor smd 0805 1 nf capacitor smd 0805 1 nf capacitor smd 0805 1 p2 capacitor smd 0805 4 m 7 capacitor smd tantal 43 nh coilcraft smd spring inductor b10t (distributed by ginsbury electronic gmbh, am moosfeld 85, d-81829 mnchen tel.: 089/45170-223) cgy 181 hl eh pd 2 tr v g v d v + gnd cgy 181 in out ver. 2.0 m 1nf 1nf 1nf 1.2 pf 43 nh eht08680 4.7 m f
cgy 181 data book 11 03.00 figure 3 principal circuit figure 4 original size eht08682 711 6, 9 3, 4, 5, 10 811 d1 v circuit control 1 v d2 v g 2 v tr out 1.2 pf 1 nf tr v in 43 nh m 4.7 f 1 nf v d + g v 1 nf gnd1 gnd2 p in out p eht08681 in ver. 2.0 m out v cgy 181 hl eh pd 2 v tr v g + gnd d
cgy 181 data book 12 03.00 figure 5 emissions due to gmsk modulation figure 6 measurement was done with the following equipment eht08683 rl 0 dbm *atten 10 db 10 db/ center 1.75000 ghz *rbw 10 khz *vbw 30 khz *swp 11 sec span 2 mhz pcn signal generator = 16 dbm out p cgy 181 out p = 31.5 dbm eht08684 cgy 181 spectrum analyzer pulsed power supply hp 8561e rohde&schwarz pcn signal generator = 16 dbm sme03 negative supply voltage -4 v = 3.6 v pulsed with a duty cycle of 10% = 0.577 ms on t gate detay 150 m s gate length 75 s m in out trigger d v d v g v tr v p in
cgy 181 data book 13 03.00 application hints 1. cw - capability of the cgy 181 proving the possibility of cw - operations there must be known the total power dissipation of the device. this value can be found as a function of temperature in the data sheet ( page 9 ). the cgy 181 has a maximum total power dissipation of p tot = 5 w. as an example we take the operating point with a drain voltage v d = 3.6 v and a typical drain current of i d = 1.2 a. so the maximum dc - power can be calculated to: p dc = v d i d =4.32w this value is smaller than 5 w and cw - operation is possible. by decoupling rf power out of the cgy 181 the power dissipation of the device can be further reduced. assuming a power added efficiency pae of 35% the total power dissipation p tot can be calculated using the following formula: p tot = p dc (1 C pae) = 4.32 w (1 C 0.35) = 2.808 w 2. operation without using the internal current control if you dont want to use the internal current control, it is recommended to connect the negative gate voltage at pin 2 ( v tr ) instead of pin 1 ( v g ). in that case v g is not connected. 3. biasing and use considerations biasing should be timed in such a way that the gate voltage ( v g ) is always applied before the drain voltages ( v d ), and when returning to the standby mode, the drain voltages have to be removed before the gate voltage.
cgy 181 data book 14 03.00 package outlines 2.2 0.1 0.2 6.5 12 11 10 9 8 7 6 45 23 1 a b +0.1 -0.05 0.4 a m 0.25 5.4 0.9 6x gpw05795 acc. to +0.2 din 6784 1.6 0.1 15?max 0.04 0.28 7 0.3 0.2 3.5 0.5 0.1 max min b m 0.25 mw-12 (special package) sorts of packing package outlines for tubes, trays etc. are contained in our data book package information. dimensions in mm smd = surface mounted device

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